- 您现在的位置：买卖IC网 > Sheet目录480 > MTD6N15T4 (ON Semiconductor)MOSFET N-CH 150V 6A DPAK
MTD6N15
SAFE OPERATING AREA
20
10
5
100 m s
1 ms
10 m s
20
15
2
1
0.5
10 ms
R DS(on) LIMIT
10
T J ≤ 150 ° C
THERMAL LIMIT
0.2
0.1
0.05
PACKAGE LIMIT
T C = 25 ° C
V GS = 20 V SINGLE PULSE
dc
5
0.03
0.3 0.5 0.7 1
2
3
5 7 10
20 30
50 70 100
200 300
0
0
20
40 60 80 100 120 140
160
V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 8. Maximum Rated Forward Biased
Safe Operating Area
FORWARD BIASED SAFE OPERATING AREA
The FBSOA curves define the maximum drain ? to ? source
voltage and drain current that a device can safely handle
when it is forward biased, or when it is on, or being turned
on. Because these curves include the limitations of
simultaneous high voltage and high current, up to the rating
of the device, they are especially useful to designers of linear
systems. The curves are based on a case temperature of 25 ° C
and a maximum junction temperature of 150 ° C. Limitations
for repetitive pulses at various case temperatures can be
determined by using the thermal response curves. Motorola
Application Note, AN569, “Transient Thermal
Resistance ? General Data and Its Use” provides detailed
instructions.
V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 9. Maximum Rated Switching
Safe Operating Area
SWITCHING SAFE OPERATING AREA
The switching safe operating area (SOA) of Figure 9 is the
boundary that the load line may traverse without incurring
damage to the MOSFET. The fundamental limits are the
peak current, I DM and the breakdown voltage, V (BR)DSS .
The switching SOA shown in Figure 8 is applicable for both
turn ? on and turn ? off of the devices for switching times less
than one microsecond.
The power averaged over a complete switching cycle
must be less than:
T J(max) ? T C
R q JC
0.7
0.5
0.3
D = 0.5
0.2
0.2
0.1
0.1 0.05
0.07
0.02
0.05
P (pk)
R q JC (t) = r(t) R q JC
R q JC (t) = 6.25 ° C/W MAX
D CURVES APPLY FOR POWER
0.03
0.02
0.01
SINGLE PULSE
t 1
t 2
DUTY CYCLE, D = t 1 /t 2
PULSE TRAIN SHOWN
READ TIME AT t 1
T J(pk) - T C = P (pk) R q JC (t)
0.01
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1 2 3 5 10
20
50
100
200
500
1000
t, TIME OR PULSE WIDTH (ms)
Figure 10. Thermal Response
http://onsemi.com
4
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
MTD6N20ET4
MOSFET N-CH 200V 6A DPAK
MTD6P10E
MOSFET P-CH 100V 6A DPAK
MTD8000N4-T
PHOTOTRANS 880NM DOME CLR TO-18
MTD8600N-T
PHOTOTRANS 880NM DOME CLR TO-18
MTD8600N4-T
PHOTOTRANS 880NM DOME CLR TO-18
MTD8600T-T
PHOTOTRANS 880NM FLAT CLR TO-18
MTD8600T4-T
PHOTOTRANS 880NM FLAT CLR TO-18
MTE1081C
INFRARED EMITTER 3MM 810NM
相关代理商/技术参数
MTD6N15T4G
功能描述:MOSFET NFET DPAK 150V 6A 300mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
MTD6N15T4GV
功能描述:MOSFET Single N-Ch 150V 6A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
MTD6N20
制造商:ON Semiconductor 功能描述:MOSFET N D-PAK
MTD6N20E
制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述:
MTD6N20E1
制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述:
MTD6N20ET4
功能描述:MOSFET 200V 6A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
MTD6N20ET4G
功能描述:MOSFET NFET DPAK 200V 6A 700mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
MTD6N20ET5G
功能描述:MOSFET NFET DPAK 200V 6A 700MO RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube